Sasaoka, Chiaki: search on Z-Library

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1

Broadband Distortion Cancellation Technique in GaAs HJFET and GaN FET Cascode Amplifier

Takenaka, Isao, Takahashi, Shinnosuke, Takahashi, Hidemasa, Ando, Yuji, Kakuta, Yuji, Sasaoka, Chiaki

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.15 MB

english, 2014

2

desorption from the Ga dangling-bond site

Mochizuki, Yuji, Takada, Toshikazu, Sasaoka, Chiaki, Usui, Akira, Miyoshi, Eisaku, Sakai, Yoshiko

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 534 KB

english, 1994

3

Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance

Chow, K. H., Vlasenko, L. S., Johannesen, P., Bozdog, C., Watkins, G. D., Usui, Akira, Sunakawa, Haruo, Sasaoka, Chiaki, Mizuta, Masashi

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 114 KB

english, 2004

4

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J, Sasaoka, Chiaki, Amano, Hiroshi

Journal:

Applied Physics Express

Year:

2019

Language:

english

File:

PDF, 972 KB

english, 2019

5

Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Kuroda, Naotaka, Sasaoka, Chiaki, Kimura, Akitaka, Usui, Akira, Mochizuki, Yasunori

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 160 KB

english, 1998

6

Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates

Sasaoka, Chiaki, Miyasaka, Fumito, Koi, Tomoaki, Kobayashi, Masahide, Murase, Yasuhiro, Ando, Yuji, Yamaguchi, Atsushi A.

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 971 KB

english, 2013

7

Theoretical study of the Cl desorption reaction induced by H2 in the chloride atomic layer epitaxy

Yuji Mochizuki, Toshikazu Takada, Toshihiro Sakuma, Susumu Handa, Chiaki Sasaoka, Akira Usui

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 824 KB

english, 1994

8

Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl

Sasaoka, Chiaki, Yoshida, Masaji, Usui, Akira

Journal:

Japanese Journal of Applied Physics

Year:

1988

File:

PDF, 433 KB

1988

9

SPIE Proceedings [SPIE Symposium on Integrated Optics - San Jose, CA (Saturday 20 January 2001)] Physics and Simulation of Optoelectronic Devices IX - Novel RiS-type InGaN MQW laser diodes on FIELO GaN substrates

Kuramoto, Masaru, Kimura, Akitaka, Sasaoka, Chiaki, Arakida, Takahiro, Nido, Masaaki, Mizuta, Masashi, Arakawa, Yasuhiko, Blood, Peter, Osinski, Marek

Year:

2001

Language:

english

File:

PDF, 360 KB

english, 2001

10

Thermal Desorption of Galliumchloride Adsorbed on GaAs (100)

Sasaoka, Chiaki, Kato, Yoshitake, Usui, Akira

Journal:

Japanese Journal of Applied Physics

Year:

1991

File:

PDF, 544 KB

1991

11

Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence

Nishinaga, Tatau, Sasaoka, Chiaki, Pak, Kangsa

Journal:

Japanese Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 377 KB

english, 1989

12

Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Kuramoto, Masaru, Sasaoka, Chiaki, Hisanaga, Yukihiro, Kimura, Akitaka, Yamaguchi, A. Atsushi, Sunakawa, Haruo, Kuroda, Naotaka, Nido, Masaaki, Usui, Akira, Mizuta, Masashi

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 158 KB

english, 1999

13

Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes

Zhang, Ziyi, Kushimoto, Maki, Horita, Masahiro, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 2.04 MB

2020

14

Impact of Epi-Layer Quality on Reliability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

Ando, Yuji, Ishikura, Kohji, Murase, Yasuhiro, Asano, Kazunori, Takenaka, Isao, Takahashi, Shinnosuke, Takahashi, Hidemasa, Sasaoka, Chiaki

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.27 MB

english, 2013

15

Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates

Kuramoto, Masaru, Kimura, Akitaka, Sasaoka, Chiaki, Arakida, Takahiro, Nido, Masaaki, Mizuta, Masashi

Journal:

Japanese Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 114 KB

english, 2001

16

On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

Sakai, Tadayoshi, Kushimoto, Maki, Zhang, Ziyi, Sugiyama, Naoharu, Schowalter, Leo J., Honda, Yoshio, Sasaoka, Chiaki, Amano, Hiroshi

Journal:

Applied Physics Letters

Year:

2020

Language:

english

File:

PDF, 1.82 MB

english, 2020

17

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

Takenaka, Isao, Ishikura, Kohji, Asano, Kazunori, Takahashi, Shinnosuke, Murase, Yasuhiro, Ando, Yuji, Takahashi, Hidemasa, Sasaoka, Chiaki

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2014

Language:

english

File:

PDF, 2.12 MB

english, 2014

18

Publisher’s Note: Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance [Phys. Rev. B 69 , 045207 (2004)]

Chow, K. H., Vlasenko, L. S., Johannesen,, P., Bozdog, C., Watkins, G. D., Usui, Akira, Sunakawa, Haruo, Sasaoka, Chiaki, Mizuta, Masashi

Journal:

Physical Review B

Year:

2004

File:

PDF, 7 KB

2004

19

Triethylgallium adsorption on Si(100) and Si(111) surfaces

Hirayama, Hiroyuki, Sasaoka, Chiaki, Tatsumi, Toru, Ohshita, Yoshio

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 546 KB

english, 1989

20

Electron Transport Mechanism for Ohmic Contact to GaN/AlGaN/GaN Heterostructure Field-Effect Transistors

Ando, Yuji, Ishikura, Kohji, Murase, Yasuhiro, Asano, Kazunori, Takenaka, Isao, Takahashi, Shinnosuke, Takahashi, Hidemasa, Sasaoka, Chiaki

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.27 MB

english, 2013

21

Correlation Between Epitaxial Layer Quality and Drain Current Stability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors

Ando, Yuji, Takenaka, Isao, Takahashi, Hidemasa, Sasaoka, Chiaki

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.22 MB

english, 2015

22

T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and $f_{\rm MAX}$

Murase, Yasuhiro, Asano, Kazunori, Takenaka, Isao, Ando, Yuji, Takahashi, Hidemasa, Sasaoka, Chiaki

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 1.23 MB

english, 2014

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